The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Sep. 17, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Sheng Chen, Taoyuan, TW;
Da-Ching Chiou, Hsinchu, TW;
Jau-Yi Wu, Hsinchu County, TW;
Carlos H. Diaz, Mountain View, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 27/2427 (2013.01); H01L 27/2436 (2013.01); H01L 45/065 (2013.01); H01L 45/12 (2013.01); H01L 45/128 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01);
Abstract
A memory device includes a conductive wire, a first 2-D material layer, a phase change element, and a top electrode. The first 2-D material layer is over the conductive wire. The phase change element extends along a surface of the first 2-D material layer distal to the conductive layer. The top electrode is over the phase change element.