The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Jan. 30, 2020
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Jagar Singh, Clifton Park, NY (US);

Alexander L. Martin, Greenfield Center, NY (US);

Alexander M. Derrickson, Troy, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/02 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01); H01L 29/737 (2006.01); H01L 21/8222 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 29/0649 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/45 (2013.01); H01L 29/6625 (2013.01);
Abstract

Embodiments of the disclosure provide an integrated circuit (IC) structure, including: a semiconductor base on a first portion of a raised region of an insulative layer; a first inner emitter/collector (E/C) material on a second portion of the raised region of the insulative layer, wherein the inner E/C material is directly horizontally between the semiconductor base and a sidewall of the raised region; and a first outer E/C material on a first non-raised region of the insulative layer, wherein an upper portion of the first outer E/C material is adjacent the first inner E/C material.


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