The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 19, 2019
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/374 (2011.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/1461 (2013.01); H01L 27/14689 (2013.01); H01L 29/42368 (2013.01); H04N 5/374 (2013.01);
Abstract
An image sensor pixel comprises a semiconductor substrate and a gate having a dielectric layer with a first section and a second section over the semiconductor substrate. The first section of the dielectric layer is thinner than the second section. A photodiode is disposed substantially beneath the gate. A gate well region is disposed beneath the gate and overlying the photodiode. A first doped semiconductor region separates the gate well region from a second doped semiconductor region. The second doped semiconductor region is in the semiconductor substrate and is adjacent to the gate.