The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 14, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Mahalingam Nandakumar, Richardson, TX (US);
Alan Erik Segervall, Half Moon Bay, CA (US);
Muhammad Yusuf Ali, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 27/08 (2006.01); H01L 27/092 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/266 (2013.01); H01L 27/0629 (2013.01); H01L 27/0811 (2013.01); H01L 27/0814 (2013.01); H01L 27/0928 (2013.01); H01L 29/0649 (2013.01);
Abstract
An electronic device, e.g. integrated circuit, has an n-type region and a p-type region located within a semiconductor substrate, the n-type region and the p-type region each intersecting the substrate surface. A dielectric structure is located directly on the substrate surface. The dielectric structure has first and second laterally opposed sides, with the first side located over the n-type region and the second side located over the p-type region.