The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

May. 07, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ju-Il Choi, Seongnam-si, KR;

Pil-Kyu Kang, Hwaseong-si, KR;

Hoechul Kim, Seoul, KR;

Hoonjoo Na, Seoul, KR;

Jaehyung Park, Anyang-si, KR;

Seongmin Son, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/16 (2006.01); H01L 23/31 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 25/167 (2013.01); H01L 23/3128 (2013.01); H01L 24/03 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/80 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 2224/024 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/039 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8083 (2013.01);
Abstract

A semiconductor device and a semiconductor package, the device including a pad interconnection structure that penetrates a first buffer dielectric layer and a second buffer dielectric layer, wherein the pad interconnection structure includes copper and tin, the pad interconnection structure includes a central part, a first intermediate part surrounding the central part; a second intermediate part surrounding the first intermediate part, and an outer part surrounding the second intermediate part, a grain size of the outer part is less than a grain size of the second intermediate part, the grain size of the second intermediate part is less than a grain size of the first intermediate part, and the grain size of the first intermediate part is less than a grain size of the central part.


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