The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Nov. 12, 2019
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Penggang Han, Shanghai, CN;
Pengkai Xu, Shanghai, CN;
Shanghai Huali Integrated Circuit Mfg. Co. Ltd., Shanghai, CN;
Abstract
The present disclosure relates to the field of semiconductor device etching process, and specifically discloses an etching method and a semiconductor device. The etching method comprises: providing a substrate on which a film layer to be etched is formed; forming a mask layer structure on the film layer to be etched, wherein the mask layer structure includes a dielectric layer formed on an upper surface of the film layer to be etched and an APF layer formed on an upper surface of the dielectric layer; patterning the APF layer; performing a first etching process on the dielectric layer and the film layer to be etched by using the patterned APF layer as a mask to pattern the dielectric layer and partially etch the film layer to be etched; removing the patterned APF layer.