The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Aug. 26, 2020
Filnex Inc., Tokyo, JP;
Mitsuhiko Ogihara, Tokyo, JP;
FILNEX INC., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes the steps of forming a fixing layer that is a thin film for coupling at least a portion of a main surface of the semiconductor thin film layer on the side opposite to a base material substrate side and at least a portion of the surface of the base material substrate on a semiconductor thin film layer side, forming a void by removing a partial region of the semiconductor thin film layer or the base material substrate, coupling an organic material layer formed on a pick-up substrate to the fixing layer after forming the void, separating the semiconductor thin film layer from the first substrate by moving the pick-up substrate away from the base material substrate with the organic material layer bonded to the coupling region, and bonding the semiconductor thin film layer to the second substrate after separation from the base material substrate.