The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Aug. 08, 2019
Kokusai Electric Corporation, Tokyo, JP;
KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).