The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Sep. 14, 2017
Flosfia Inc., Kyoto, JP;
Kyoto University, Kyoto, JP;
Shizuo Fujita, Kyoto, JP;
Takayuki Uchida, Kyoto, JP;
Kentaro Kaneko, Kyoto, JP;
Masaya Oda, Kyoto, JP;
Toshimi Hitora, Kyoto, JP;
FLOSFIA INC., Kyoto, JP;
KYOTO UNIVERSITY, Kyoto, JP;
Abstract
A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×10/cmor less and electron mobility that is 1 cm/Vs or more.