The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Mar. 09, 2020
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Tao Wang, Shanghai, CN;

Xiao Zheng, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/10 (2006.01); G11C 8/10 (2006.01); G11C 29/00 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/1069 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 8/10 (2013.01); G11C 29/006 (2013.01);
Abstract

Data reading method, device, and storage medium of a non-volatile memory are provided. The method includes obtaining address information and decoding the address information to determine an address of a corresponding memory cell; when the address of the memory cell is in a selected region, adjusting a first determination reference value to obtain a second determination reference value; applying a readout current to the memory cell, and obtaining a determination current outputted by the memory cell; and comparing a value range of the determination current outputted by the memory cell with the second determination reference value and reading out data content stored in the memory cell.


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