The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 19, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co.y, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/28088 (2013.01); H01L 21/764 (2013.01); H01L 29/0649 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/4966 (2013.01); H01L 29/78696 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes forming a first semiconductor layer over a substrate, forming a second semiconductor layer over the first semiconductor layer, and forming a sacrificial film over the first semiconductor layer and the second semiconductor layer. The sacrificial film fills an area between the first semiconductor layer and the second semiconductor layer. The method further includes forming a space in the sacrificial film between the first semiconductor layer and the second semiconductor layer and removing the sacrificial film.