The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Dec. 11, 2019
Applicant:
Fujian Jinhua Integrated Circuit Co., Ltd., Fujian, CN;
Inventors:
Yu-Cheng Tung, Fujian, CN;
Yun-Fan Chou, Fujian, CN;
Te-Hao Huang, Fujian, CN;
Hsien-Shih Chu, Fujian, CN;
Feng-Ming Huang, Fujian, CN;
Assignee:
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01);
Abstract
A semiconductor structure and a method of forming the semiconductor structure are disclosed. Through forming an electrically conductive structure on a trench isolation structure, utilization of a space above the trench isolation structure is achievable, which can reduce the space required in a semiconductor integrated circuit to accommodate the electrically conductive structure, thus facilitating dimensional shrinkage of the semiconductor integrated circuit.