The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Apr. 01, 2020
Applicant:

National Yang Ming Chiao Tung University, Hsinchu, TW;

Inventors:

Chih Chen, Hsinchu, TW;

Kai-Cheng Shie, Taichung, TW;

Jing-Ye Juang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 2224/27462 (2013.01); H01L 2224/29019 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/83091 (2013.01); H01L 2224/83095 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83345 (2013.01); H01L 2224/83359 (2013.01); H01L 2224/83895 (2013.01);
Abstract

Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.


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