The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jul. 03, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chung-Yen Chou, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure includes: providing a substrate; forming a first conductive layer having a first opening over the substrate; depositing a first dielectric layer over the first conductive layer and covering the first opening; forming a second conductive layer having a second opening over the first dielectric layer; depositing a second dielectric layer over the second conductive layer and covering the second opening; performing an etching operation through the second dielectric layer at the second opening and the first dielectric layer at the first opening to form a first via; and forming a first conductive structure in the first via.