The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

Mar. 26, 2020
Applicant:

Ulvac-phi, Inc, Chigasaki, JP;

Inventors:

Mauo Sogou, Chigasaki, JP;

Hiromichi Yamazui, Chigasaki, JP;

Daisuke Sakai, Chigasaki, JP;

Katsumi Watanabe, Chigasaki, JP;

Assignee:

ULVAC-PHI, INC, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 2237/002 (2013.01);
Abstract

An analyzing apparatus includes a sample chamber, a measurement apparatus, and a gas cluster ion beam apparatus. A cooling body separates an ionization chamber of the gas cluster ion beam apparatus from a nozzle support to prevent heat emitted by an ionization filament from being transmitted to the nozzle support, and a temperature of a source gas emitted from a nozzle is kept at a constant temperature by a gas heating device while a sputtering rate is kept constant. A pressure of the source gas supplied to the nozzle is kept at constant pressure by a pressure controller, and a size of gas cluster ions is kept at a constant value. Because the sputtering rate is a constant value, highly accurate depth surface profiling can be performed.


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