The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
May. 11, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Akhilesh R. Jaiswal, Falls Church, VA (US);
Ajey Poovannummoottil Jacob, Watervliet, NY (US);
Steven R. Soss, Saratoga Springs, NY (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
The disclosure provides a circuit structure and method for memory storage using a memory cell and magnetic random access memory (MRAM) stack. A circuit structure includes a memory cell having a first latch configured to store a digital bit, a first diode coupled to the first latch, and a first magnetic random access memory (MRAM) stack coupled to the first latch of the memory cell through the first diode. The first MRAM stack includes a first layer and a second layer each having a respective magnetic moment. The magnetic moment of the second layer is adjustable between a parallel orientation and an antiparallel orientation with respect to the magnetic moment of the first layer. Further, the magnetic anisotropy of the second layer can be modified through application of an applied voltage (VCMA effect). A spin Hall electrode is directly coupled to the first MRAM stack.