The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Nov. 13, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yung-Chang Chang, Taipei, TW;
Chung-Yen Chou, Hsinchu, TW;
Ming-Chyi Liu, Hsinchu, TW;
Shih-Chang Liu, Kaohsiung County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/136 (2006.01); G02B 6/124 (2006.01); G02B 6/122 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G02B 6/12002 (2013.01); G02B 6/124 (2013.01); G02B 6/1228 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12107 (2013.01); G02B 2006/12195 (2013.01);
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate and a gate element over the substrate. The gate element includes: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; and a waveguide passing through the gate electrode from a top surface of the gate electrode to a bottom surface of the gate electrode. A manufacturing method of the same is also disclosed.