The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jan. 29, 2019
Fuji Electric Co., Ltd., Kanagawa, JP;
Hiroki Katsumata, Hino, JP;
Michio Tamate, Hachioji, JP;
Miwako Fujita, Tachikawa, JP;
Tamiko Asano, Hino, JP;
Yuhei Suzuki, Suzuka, JP;
Takashi Kaimi, Neyagawa, JP;
Yuta Sunasaka, Fukuoka, JP;
Tadanori Yamada, Matsumoto, JP;
Ryu Araki, Matsumoto, JP;
Bao Cong Hiu, Kokubunji, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.