The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 12, 2021

Filed:

May. 18, 2017
Applicant:

Stmicroelectronics, Inc., Coppell, TX (US);

Inventors:

Davy Choi, Carrollton, TX (US);

Yamu Hu, Allen, TX (US);

Deyou Fang, Frisco, TX (US);

Assignee:

STMICROELECTRONICS, INC., Coppell, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01P 21/00 (2006.01); G01P 15/125 (2006.01); G01R 19/10 (2006.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
G01P 21/00 (2013.01); G01P 15/125 (2013.01); G01R 19/10 (2013.01); G01R 31/2829 (2013.01);
Abstract

In one embodiment, a method for detecting functional state of a microelectromechanical (MEMS) sensor is described. The method includes monitoring an input common-mode feedback (ICMFB) voltage generated by an ICMFB circuit coupled to the MEMS sensor through a plurality of nodes. The method also includes determining, using the monitored ICMFB voltage, whether all of the plurality of nodes of the MEMS sensor are electrically connected to the ICMFB circuit.


Find Patent Forward Citations

Choi, Davy. (2021). Sensing an icmfb output to detect functional state of a mems sensor (U.S. Patent No. 11143670). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11143670

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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