The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Aug. 23, 2019
Fuji Electric Co., Ltd., Kawasaki, JP;
Akimasa Kinoshita, Matsumoto, JP;
Keiji Okumura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A trench gate MOSFET has at an n-type current spreading region between an n-type drift region and a p-type base region, a first p-type region facing a bottom of a trench, and a second p-type region disposed between adjacent trenches. The first and the second p-type regions extend parallel to a first direction in which the trench extends and are partially connected by a p-type connecting portion and thus, disposed in a ladder shape when viewed from the front surface of a semiconductor substrate. The second p-type region has at a portion of a surface on a drain side, a recessed portion that is recessed toward a source side. One or more recessed portions is provided between connection sites in the second p-type region for connection with the p-type connecting portions that are adjacent to each other in the first direction X.