The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Jul. 03, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Carsten Schaeffer, Annenheim, AT;

Alexander Breymesser, Villach, AT;

Bernhard Goller, Villach, AT;

Ronny Kern, Finkenstein, DE;

Matteo Piccin, Villach, AT;

Roland Rupp, Lauf, DE;

Francisco Javier Santos Rodriguez, Villach, AT;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/784 (2006.01); H01L 21/683 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/046 (2013.01); H01L 21/0485 (2013.01); H01L 21/6835 (2013.01); H01L 21/784 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 23/3121 (2013.01); H01L 24/48 (2013.01); H01L 24/83 (2013.01); H01L 29/45 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68372 (2013.01); H01L 2221/68377 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48245 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83894 (2013.01);
Abstract

According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.


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