The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Apr. 10, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuo-An Liu, Hsinchu, TW;

Chung-Cheng Wu, Ju-Bei, TW;

Harry-Hak-Lay Chuang, Zhubei, TW;

Gwan-Sin Chang, Hsinchu, TW;

Tien-Wei Chiang, Taipei, TW;

Zhiqiang Wu, Chubei, TW;

Chia-Hsiang Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); G11C 11/1695 (2013.01);
Abstract

In some embodiments, the present application provides a memory device. The memory device includes a chip that includes a magnetic random access memory (MRAM) cell. A magnetic-field-shielding structure comprised of conductive or magnetic material at least partially surrounds the chip. The magnetic-field-shielding structure comprises a sidewall region that laterally surrounds the chip, an upper region extending upward from the sidewall region, and a lower region extending downward from the sidewall region. At least one of the upper region and/or lower region terminate at an opening over the chip.


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