Integrated assemblies comprising spaces between bitlines and comprising conductive plates operationally proximate the bitlines, and methods of forming integrated assemblies

Abstract

Some embodiments include an integrated assembly having bitlines spaced from one another by intervening voids. Insulative supports are over the bitlines. A conductive plate is supported by the insulative supports and is proximate the bitlines to drain excess charge from the bitlines. Some embodiments include a method of forming an integrated assembly. A stack is formed to have insulative material over bitline material. The stack is patterned into rails that extend along a first direction. The rails include the patterned bitline material as bitlines, and include the patterned insulative material as insulative supports over the bitlines. The rails are spaced from one another along a second direction, orthogonal to the first direction, by voids. Sacrificial material is formed within the voids. A conductive plate is formed over the insulative supports and the sacrificial material. The sacrificial material is removed from under the conductive plate to re-form the voids.