The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Aug. 07, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ming-Cheng Lin, Yilan, TW;
Chen-Bau Wu, Zhubei, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Haw-Yun Wu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor device including a first high electron mobility transistor (HEMT) device disposed within a semiconductor structure and having a first source, a first drain, and a first gate; a second HEMT device disposed within the semiconductor structure and having a second source, a second drain, and a second gate, the second source coupled to the first drain; and a diode-connected transistor device disposed within the semiconductor structure and comprising a third source, a third gate, and a third drain, the third drain coupled to the second gate.