The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Sep. 20, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Yueh-Chuan Lee, Hsinchu, TW;
Chia-Chan Chen, Zhubei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 29/40 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/027 (2006.01); H01L 27/088 (2006.01); H01L 23/528 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823475 (2013.01); H01L 21/0274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 27/088 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/42356 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01);
Abstract
A semiconductor arrangement is provided. The semiconductor arrangement includes a first conductive element over a substrate and a second conductive element over the substrate. A dielectric region is over a top surface of the substrate and between the first conductive element and the second conductive element. An electrically conductive structure is over the first conductive element, the second conductive element, and the dielectric region.