The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Dec. 16, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Xi-Zong Chen, Tainan, TW;
Yun-Yu Hsieh, Hsinchu, TW;
Cha-Hsin Chao, Taipei, TW;
Li-Te Hsu, Shanhua Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); H01J 37/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01J 37/00 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/3088 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/32134 (2013.01); H01L 21/32155 (2013.01);
Abstract
A method includes forming a mask layer over a target layer. A first etching process is performed on the mask layer to form a first opening and a second opening in the mask layer. A second etching process is performed on the mask layer to reduce an end-to-end spacing between the first opening and the second opening. The first etching process and the second etching process have different anisotropy properties. A pattern of the mask layer is transferred to the target layer.