The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Nov. 22, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Christopher G. Wieduwilt, Boise, ID (US);

James S. Rehmeyer, Boise, ID (US);

Seth A. Eichmeyer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 29/44 (2006.01); G11C 29/02 (2006.01); G11C 29/00 (2006.01); H03M 13/11 (2006.01); G11C 11/409 (2006.01); H03M 13/13 (2006.01); G11C 29/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/44 (2013.01); G11C 11/409 (2013.01); G11C 29/027 (2013.01); G11C 29/18 (2013.01); G11C 29/789 (2013.01); H03M 13/1105 (2013.01); H03M 13/13 (2013.01);
Abstract

Methods, apparatuses and systems related to managing access to a memory device are described. A memory device includes fuses and latches for storing a repair segment locator and a repair address for each repair of one or more defective memory cells. A segment-address determination circuit generate an active segment address based on the repair address according to the repair segment locator and an address for a read or a write operation. A comparator circuitry is configured to determine whether the active segment address matches the address for the read or the write operation for replacing the one or more defective memory cells with the plurality of redundant cells when the address for the read/write operation corresponds to the one or more defective memory cells.


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