The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Jun. 25, 2020
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Ashraf B. Islam, El Dorado Hills, CA (US);
Kevin E. Arendt, Orangevale, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 2013/0045 (2013.01);
Abstract
A method, apparatus and system. The method includes: generating, during a read operation of a memory cell, a mirror current iMir1 at one of a WL node or a BL node of the memory cell opposite, respectively, one of a BL side or a WL side of the memory cell to which a current mode sense circuitry is connected, the iMir1 to reduce a value of the read voltage from VDM1 to VDM2, wherein the read voltage is between the WL node and the BL node; and sensing, using the current mode sense circuitry, a logic state of the memory cell at VDM2.