The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Dec. 18, 2018
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Hsuan Lin, Taichung, TW;

Chao-Hung Wang, Tainan, TW;

Ming-Hsiu Lee, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2006.01); G11C 11/54 (2006.01); G11C 27/00 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G06N 3/063 (2013.01); G11C 7/1006 (2013.01); G11C 11/54 (2013.01); G11C 27/005 (2013.01);
Abstract

An in-memory computing device includes a plurality of synaptic layers including a first type of synaptic layer and a second type of synaptic layer. The first type of synaptic layer comprises memory cells of a first type of memory cell and the second type of synaptic layer comprises memory cells of a second type, the first type of memory cell being different than the second type of memory cell. The first and second types of memory cells can be different types of memories, have different structures, different memory materials, and/or different read/write algorithms, any one of which can result in variations in the stability or accuracy of the data stored in the memory cells.


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