The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 05, 2021

Filed:

Sep. 08, 2017
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Arend Johannes Donkerbroek, Aarle-Rixtel, NL;

Jeroen Cottaar, Eindhoven, NL;

Thomas Theeuwes, Veldhoven, NL;

Erik Johan Koop, Eindhoven, NL;

Assignee:

ASML Netherlands B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 9/7034 (2013.01); G03F 7/70633 (2013.01); G03F 9/7019 (2013.01); G03F 9/7023 (2013.01); G03F 9/7026 (2013.01); G03F 9/7057 (2013.01); H01L 21/0274 (2013.01);
Abstract

Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.


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