The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Apr. 22, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 29/775 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 27/088 (2013.01); H01L 29/0673 (2013.01); H01L 29/1033 (2013.01); H01L 29/665 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/7391 (2013.01); H01L 21/28518 (2013.01); H01L 29/775 (2013.01);
Abstract
A device includes a substrate, a first doping portion, a second doping portion, a channel, a semiconductor film, a high-k layer, and a gate. The first doping portion and the second doping portion are over the substrate. The channel is over the substrate and between the first doping portion and the second doping portion. The semiconductor film is around the channel. The high-k layer is around the semiconductor film. The gate is over the high-k layer.