The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Jun. 04, 2019
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Alexander Lee Martin, Saratoga Springs, NY (US);
Jagar Singh, Clifton Park, NY (US);
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
One illustrative method of forming heterojunction bipolar devices includes, among other things, forming a first gate structure above an active semiconductor layer, forming a second gate structure adjacent a first side of the first gate structure, forming a third gate structure adjacent a second side of the first gate structure, forming an emitter of a bipolar transistor in the active semiconductor layer between the first gate structure and the second gate structure, forming a collector of the bipolar transistor in the active semiconductor layer between the first gate structure and the third gate structure, and forming a first base contact contacting the active region adjacent an end of the first gate structure, wherein a portion of the active semiconductor layer positioned under the first gate structure defines a base of the bipolar transistor.