The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Dec. 05, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Chan Chen, Zhubei, TW;
Yueh-Chuan Lee, Hsinchu, TW;
Ta-Hsin Chen, Taichung, TW;
Shih-Hsien Huang, Hsin-Chu, TW;
Chih-Huang Li, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A photosensor device and the method of making the same are provided. In one embodiment, the device includes at least one pixel cell. The at least one pixel cell includes a substrate formed from a semiconductor material, and includes first and second photosensor regions. The first photosensor region is disposed in the substrate and includes a first dopant of a first conductivity type. The second photosensor region is disposed above the first photosensor region and includes a second dopant of a second conductivity type. The second photosensor region can have an increase in dopant concentration from an outer edge to a center portion therein.