The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

May. 23, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jun-Won Lee, Asan-si, KR;

Hyuk-Woo Kwon, Seoul, KR;

Ik-Soo Kim, Yongin-si, KR;

Byoung-Deog Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1085 (2013.01); H01L 21/02129 (2013.01); H01L 21/02131 (2013.01); H01L 21/02164 (2013.01); H01L 21/311 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/823468 (2013.01); H01L 27/10805 (2013.01); H01L 27/10855 (2013.01);
Abstract

A semiconductor device and a method of manufacturing a semiconductor device, the device including a substrate; a lower structure including pad patterns on the substrate, upper surfaces of the pad patterns being at an outer side of the lower structure; a plurality of lower electrodes contacting the upper surfaces of the pad patterns; a dielectric layer and an upper electrode sequentially stacked on a surface of each of the lower electrodes; and a hydrogen supply layer including hydrogen, the hydrogen supply layer being between the lower electrodes and closer to the substrate than the dielectric layer is to the substrate.


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