The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Mar. 24, 2020
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Chih-Yen Chen, Tainan, TW;

Hsin-Chang Tsai, Kaohsiung, TW;

Chun-Yi Wu, Taichung, TW;

Chia-Ching Huang, Taoyuan, TW;

Chih-Jen Hsiao, Jhuangwei Township, TW;

Wei-Chan Chang, Taoyuan, TW;

Francois Hebert, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49844 (2013.01); H01L 23/15 (2013.01); H01L 23/49883 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a base, a seed layer, a compound semiconductor layer, a gate structure, a source structure, a drain structure, and a conductive paste. The seed layer is disposed on the base. The compound semiconductor layer is disposed on the seed layer. The gate structure is disposed on the compound semiconductor layer. The source structure and the drain structure are disposed on both sides of the gate structure. In addition, the conductive paste is disposed between the base and a lead frame, and the conductive paste extends to the side surface of the base.


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