The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
May. 22, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/458 (2006.01); H01L 21/673 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67309 (2013.01); C23C 16/4583 (2013.01); C23C 16/4587 (2013.01); H01L 21/67017 (2013.01); H01L 21/67098 (2013.01); H01L 21/67313 (2013.01);
Abstract
A method for forming a film is provided. The method includes sequentially placing a first wafer, a second wafer, and a third wafer in a chamber. The first wafer is separated from the second wafer by a first distance, the second wafer is separated from the third wafer by a second distance, and the first distance is smaller than the second distance. At least one process gas is introduced sequentially passing through the first wafer, the second wafer and the third wafer in the chamber.