The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Sep. 29, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Nathan Joseph Sirocka, Loomis, CA (US);

Mingdong Cui, Folsom, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G11C 11/413 (2006.01); G11C 11/4074 (2006.01); G11C 29/50 (2006.01); G11C 11/408 (2006.01); G11C 11/4094 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/413 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 29/50004 (2013.01); G11C 5/14 (2013.01); G11C 5/144 (2013.01);
Abstract

An integrated circuit memory device, having: memory cells; a circuit patch configured on an integrated circuit die; a plurality of neighboring patches configured on the integrated circuit die; first connections from the circuit patch to the neighboring patches respectively; a plurality of surrounding patches configured on the integrated circuit die; and second connections from the neighboring patches to the surrounding patches. In determining whether or not to apply an offset voltage to be driven by the neighboring patches and the surrounding patches on non-selected memory cells, to at least partially offset a voltage increase applied by the circuit patch on one or more selected memory cells, the circuit patch communicates with the neighboring patches through the first connections, and communicates with the surrounding patches through the first connections, the neighboring patches, and the second connections.


Find Patent Forward Citations

Loading…