The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 28, 2021

Filed:

Oct. 05, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Byung S. Moon, Plano, TX (US);

Harish N. Venkata, Allen, TX (US);

Gary L. Howe, Plano, TX (US);

Myung Ho Bae, McKinney, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/20 (2006.01); G06F 3/06 (2006.01); G11C 11/4072 (2006.01); G11C 8/04 (2006.01); G11C 7/10 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 29/02 (2006.01); G11C 29/46 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0652 (2013.01); G06F 3/065 (2013.01); G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0685 (2013.01); G06F 11/1048 (2013.01); G11C 7/1018 (2013.01); G11C 7/20 (2013.01); G11C 8/04 (2013.01); G11C 11/4072 (2013.01); G06F 11/1068 (2013.01); G11C 29/022 (2013.01); G11C 29/028 (2013.01); G11C 29/46 (2013.01); G11C 29/52 (2013.01);
Abstract

A memory device may include a first wordline and a second wordline, each having multiple memory cells. The memory device may also include control circuitry to facilitate writing a data pattern to the memory cells of the first wordline and facilitate copying the data pattern from the first wordline to the second wordline. Copying the first wordline to the second wordline may include activating the second wordline such that the first wordline and the second wordline are simultaneously active. A memory cell of the first wordline may be written a data value of the data pattern, and the memory cell may drive, at least partially, a corresponding memory cell of the second wordline with the data value.


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