The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Jun. 29, 2018
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Hongxin Yang, Newark, CA (US);

Bing K. Yen, Cupertino, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 43/10 (2013.01);
Abstract

The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.


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