The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Jun. 19, 2020
Micron Technology, Inc., Boise, ID (US);
Kentaro Ishii, Tokyo, JP;
Yongjun J. Hu, Boise, ID (US);
Amirhasan Nourbakhsh, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Christopher W. Petz, Boise, ID (US);
Luca Fumagalli, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.