The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Mar. 21, 2018
Applicant:

Soitec, Bernin, FR;

Inventors:

Walter Schwarzenbach, Saint Nazaire les Eymes, FR;

Oleg Kononchuk, Theys, FR;

Ludovic Ecarnot, Grenoble, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/146 (2006.01); H01L 31/028 (2006.01); H01L 21/02 (2006.01); H01L 21/203 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/2033 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 31/028 (2013.01);
Abstract

A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.


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