The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Aug. 02, 2018
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Kevin R. Anglin, Somerville, MA (US);

Simon Ruffell, South Hamilton, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/263 (2006.01); H01L 21/033 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 37/32899 (2013.01); H01L 21/0335 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.


Find Patent Forward Citations

Loading…