The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Apr. 14, 2020
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Wen-Chiao Ho, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1068 (2013.01);
Abstract

A memory apparatus and a data reading method thereof are provided. In the method, a plurality of memory cells of the memory apparatus are read to obtain read data, in which a threshold voltage of each memory cell is sensed and respectively compared with a first reference voltage and a second reference voltage to determine bit values. The first reference voltage and the second reference voltage are used to distinguish different states of the memory cell and the second reference voltage is larger than the first reference voltage. The bit values of the memory cells having the threshold voltage between the first reference voltage and the second reference voltage in the read data are gradually changed and syndromes of the changed read data are calculated. The read data is corrected according to values of the syndromes.


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Ho, Wen-Chiao. (2021). Memory apparatus and data reading method thereof (U.S. Patent No. 11127473). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11127473

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