The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Nov. 25, 2019
Applicant:
Sense Photonics, Inc., Durham, NC (US);
Inventors:
Scott Burroughs, Raleigh, NC (US);
Brent Fisher, Bethesda, MD (US);
James Carter, Chapel Hill, NC (US);
Assignee:
Sense Photonics, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/00 (2006.01); G01S 17/02 (2020.01); G01S 17/89 (2020.01); H01S 5/042 (2006.01); H01S 5/40 (2006.01); G02B 26/10 (2006.01); H01S 5/42 (2006.01); H01L 31/167 (2006.01); G02B 5/08 (2006.01); H01L 25/00 (2006.01); H01S 3/02 (2006.01); G01S 7/481 (2006.01); H01S 5/026 (2006.01); H01S 5/02253 (2021.01); F21V 5/04 (2006.01); H01S 5/062 (2006.01); G01J 1/44 (2006.01); H01L 31/18 (2006.01); G02B 3/00 (2006.01); H01S 5/12 (2021.01); H01S 5/02 (2006.01); H01S 5/02255 (2021.01);
U.S. Cl.
CPC ...
G01S 7/4815 (2013.01); F21V 5/041 (2013.01); F21V 5/045 (2013.01); G01J 1/44 (2013.01); G01S 17/02 (2013.01); G01S 17/89 (2013.01); G02B 5/0883 (2013.01); G02B 26/10 (2013.01); H01L 25/50 (2013.01); H01L 31/167 (2013.01); H01L 31/18 (2013.01); H01S 3/025 (2013.01); H01S 5/0028 (2013.01); H01S 5/0071 (2013.01); H01S 5/026 (2013.01); H01S 5/0262 (2013.01); H01S 5/02253 (2021.01); H01S 5/04254 (2019.08); H01S 5/062 (2013.01); H01S 5/183 (2013.01); H01S 5/18394 (2013.01); H01S 5/18397 (2013.01); H01S 5/30 (2013.01); H01S 5/40 (2013.01); H01S 5/4025 (2013.01); H01S 5/4037 (2013.01); H01S 5/4075 (2013.01); H01S 5/423 (2013.01); G01J 2001/448 (2013.01); G02B 3/0006 (2013.01); H01S 5/0216 (2013.01); H01S 5/0217 (2013.01); H01S 5/02255 (2021.01); H01S 5/04257 (2019.08); H01S 5/12 (2013.01);
Abstract
A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.