The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Dec. 23, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xiaodong Xu, Wuhan, CN;

Xiangming Zhao, Wuhan, CN;

Shunlin Liu, Wuhan, CN;

Yi Chen, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 31/317 (2006.01); G01R 31/3185 (2006.01); G11C 7/22 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/31713 (2013.01); G01R 31/318572 (2013.01); G11C 7/222 (2013.01); G11C 29/023 (2013.01);
Abstract

A method is used to test a memory device including a package substrate, a controller die and a memory die. The package substrate includes an isolation pin, a test mode select pin, a test clock pin and a test data pin. The method includes setting the isolation pin to an isolation state to isolate the memory die from the controller die, and when the isolation pin is set to the isolation state, setting the memory die to receive control via the test mode select pin, the test clock pin and the test data pin.


Find Patent Forward Citations

Xu, Xiaodong. (2021). Method of testing memory device employing limited number of test pins and memory device utilizing same (U.S. Patent No. 11125816). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11125816

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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