The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 24, 2018
Wuhan China Star Optoelectronics Technology Co., Ltd., Hubei, CN;
Hirayama Hideo, Guangdong, CN;
Abstract
An array substrate includes first and second thin-film transistors formed on a base and spaced by a predetermined distance in a first direction that is parallel to the plane on which the base is located and set in parallel. The first thin-film transistor includes a first active layer, a first gate insulation layer, a first gate electrode, a first interlayer insulation layer, and first source/drain electrodes sequentially stacked on the base in a third direction that is perpendicular to the first direction. The first source/drain electrodes are electrically connected to the first active layer. The second thin-film transistor includes a second gate electrode, a second gate insulation layer, second source/drain electrodes, and a second active layer sequentially stacked on the base in the third direction. The first active layer and the first gate electrode are both formed of a poly-silicon material. The second active layer includes an oxide semiconductor material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile