The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Sep. 24, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaehoon Choi, Suwon-si, KR;

Doohwan Lee, Suwon-si, KR;

Byungho Kim, Suwon-si, KR;

Jooyoung Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/13 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4857 (2013.01); H01L 23/13 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08238 (2013.01);
Abstract

A semiconductor package includes a semiconductor chip including a connection pad disposed on an active surface of the semiconductor chip, a passivation layer disposed on the connection pad and the active surface and having an opening exposing at least a portion of the connection pad, and a capping pad covering the connection pad exposed to the opening; an encapsulant covering at least a portion of the semiconductor chip; and a connection structure disposed on the active surface of the semiconductor chip and including a connection via connected to the capping pad and a redistribution layer connected to the connection via, wherein the capping pad includes: a central portion disposed in the opening, and a peripheral portion extending from the central portion onto the passivation layer, and having a crystal grain having a size different from that of the crystal grain of the central portion.


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