The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Mar. 14, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 23/528 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01);
Abstract
A semiconductor structure includes a substrate, a device, a contact via, a metal/dielectric layer, and a test structure. The device is over the substrate. The contact via is connected to the device. The metal/dielectric layer is over the contact via. The metal/dielectric layer includes a first portion and a second portion. The first portion of the metal/dielectric layer has a metallization pattern connected to the contact via. The second portion of the metal/dielectric layer is void of metal. The test structure is over the second portion of the metal/dielectric layer.