The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jul. 30, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Jason Zse-cherng Lin, Saratoga, CA (US);
Shauh-Teh Juang, Saratoga, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A hot spot methodology incorporates wafer physical measurement with digital simulation for identifying and monitoring critical hot spots. Wafer physical data are collected from the processed wafer of the semiconductor device on a plurality of target locations. Hot spot candidates and corresponding simulation data are generated by digital simulation based on models and verifications of optical proximity and lithographic process correction according to the design data of a semiconductor device. Data analytics provides data correlation between the collected wafer physical data and the simulation data. Data analytics further performs data correction on the simulation data according to the wafer physical data that have best correlation with the simulation data to better predict critical hot spots.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile