The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Dec. 14, 2017
Applicant:

Asia Electronic Material Co., Ltd., Hsinchu County, TW;

Inventors:

Wei-Chih Lee, Zhubei, TW;

Li-Chih Yang, Zhubei, TW;

Chien-Hui Lee, Zhubei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H05K 3/28 (2006.01); B32B 27/08 (2006.01); B32B 27/32 (2006.01);
U.S. Cl.
CPC ...
H05K 1/024 (2013.01); H05K 3/28 (2013.01); H05K 3/281 (2013.01); B32B 27/08 (2013.01); B32B 27/32 (2013.01); B32B 2255/10 (2013.01); B32B 2255/26 (2013.01); B32B 2457/08 (2013.01); H05K 1/0274 (2013.01); H05K 2201/012 (2013.01); H05K 2201/015 (2013.01); H05K 2201/0145 (2013.01); H05K 2201/0154 (2013.01); H05K 2201/0175 (2013.01); H05K 2201/0195 (2013.01); H05K 2201/0761 (2013.01); H05K 2203/066 (2013.01); H05K 2203/161 (2013.01);
Abstract

A colored thin covering film is provided, including an upper detached layer, a colored ink film, a low dielectric glue layer, and a lower detached layer. The color ink layer is formed between the upper detached layer and the low dielectric glue layer. The low dielectric glue layer is formed between the colored ink layer and the lower detached layer. The thickness of the colored ink layer is between 1 to 10 μm, and the thickness of the low dielectric glue layer is between 3 to 25 μm, such that a total thickness of the colored ink layer and the low dielectric glue layer is allowed to be between 4 to 35 μm. The colored thin covering film has an extremely low dielectric constant and loss, extremely low ion migration, good adhesion, heat dissipation, high flexibility, and low resilience, and can be processed in a low temperature.


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